sfh619a document number 83674 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 1 i179062 1 2 4 3 e c a c pb p b -free e3 optocoupler, photodarlington output, high gain, 300 v bv ceo features ? high collector-emitter voltage (v ceo = 300 v) high isolation test voltage, 5300 v rms standard plastic dip-4 package compatible with toshiba tlp627 lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul - file no. e52744 system code h or j bsi iec60950 iec60065 description the sfh619a is optically coupled isolators with a gallium arsenide infrared led and a silicon photo- darlington sensor. switching can be achieved while maintaining a high degree of isolation between driving and load circuits. these op tocouplers can be used to replace reed and mercury relays with advantages of long life, high speed swit ching and elimination of magnetic fields. order information for additional information on t he available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause pe rmanent damage to the device. func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. exposure to absolute maximum rating for extended periods of t he time can adversely affect reliability. input part remarks sfh619a ctr > 1000 %, dip-4 SFH619A-X007 ctr > 1000 %, smd-4 (option 7) sfh619a-x009 ctr > 1000 %, smd-4 (option 9) parameter test condition symbol value unit peak reverse voltage v rm 6.0 v forward continuous current i f 60 ma derate linearly from 25 c 1.33 mw/c power dissipation p diss 100 mw
www.vishay.com 2 document number 83674 rev. 1.4, 26-oct-04 sfh619a vishay semiconductors output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing require ments. typical values are c haracteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 300 v emitter-collector breakdown voltage bv eco 0.3 v collector (load) current i c 125 ma derate linearly from 25 c 2.00 mw/c power dissipation p diss 150 mw parameter test condition symbol value unit derate linearly from 25 c 3.33 mw/c total power dissipation p tot 250 mw isolation test voltage (between emitter and detector, standard climate: 23 c/50 % rh, din 50014) t = 1 s v iso 5300 v rms creepage 7.0 mm clearance 7.0 mm isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm t sld 260 c parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma v f 1.2 1.5 v reverse current v r = 6.0 v i r 0.02 10 a capacitance v r = 0 v c o 14 pf parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i ce = 100 abv ceo 300 v emitter-collector breakdown voltage i ec = 100 abv eco 0.3 v collector-emitter dark current v ce = 200 v, t a = 25 c i ceo 10 200 na v ce = 200 v, t a = 100 c i ceo 20 na collector-emitter capacitance v ce = 0 v, f = 1.0 mhz c ce 39 pf
sfh619a document number 83674 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 3 coupler current transfer ratio switching characteristics typical characteris tics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit collector-emitter saturation voltage i f = 1.0 ma, i c = 10 ma v cesat 1.0 v v cesat 0.3 1.2 v coupling capacitance v i-o = 0 v, f = 1.0 mhz c c 0.6 pf parameter test condition symbol min ty p. max unit current transfer ratio i f = 1.0 ma, v ce = 1.0 v ctr 1000 % parameter test condition symbol min ty p. max unit rise time v cc = 10 v, i c = 10 ma, r l = 100 ? t r 3.5 s v cc = 10 v, i f = 16 ma, r l = 180 ? t r 1.0 s fall time v cc = 10 v, i c = 10 ma, r l = 100 ? t f 14.5 s v cc = 10 v, i f = 16 ma, r l = 180 ? t f 20.5 s turn-on time v cc = 10 v, i c = 10 ma, r l = 100 ? t on 4.5 s v cc = 10 v, i f = 16 ma, r l = 180 ? t on 1.5 s turn-off time v cc = 10 v, i c = 10 ma, r l = 100 ? t off 29.0 s v cc = 10 v, i f = 16 ma, r l = 180 ? t off 53.5 s figure 1. switching waveform and switching schematic isfh619a_01 i f t r v o t f t off t on v ce r l v cc i f fi 2ctctasfacta isfh619a_03 forward current, i f (ma) collector current, i c (ma) v ce =1.0 v v ce =1.2 v 1000.00 100.00 10.00 1.00 0.10 0.01 0 1 10 100
www.vishay.com 4 document number 83674 rev. 1.4, 26-oct-04 sfh619a vishay semiconductors figure 3. collector current vs. forward current figure 4. collector current vs. ambient temperature figure 5. collector current vs. collector emitter voltage isfh619a_04 0 5 10 15 20 25 30 35 40 45 50 forward current, i f (ma) collector current, i c (ma) 140 120 100 80 60 40 20 0 t a = 100c t a = C40c t a = 25c isfh619a_05 collector current, i c (ma) temperature, t a (c) 90.00 80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 C40 C20 0 20 40 60 80 100 i f =10(ma) i f = 1 (ma) isfh619a_06 0.6 0.7 0.8 0.9 1.0 1.1 1.2 140 120 100 80 60 40 20 0 collector current, i c (ma) collector-emitter voltage, v ce (v) figure 6.collector-emitterarcurrents.collector-emitter voltageoertemperature figure 7.currenttransfer ratios.forwardcurrent figure 8.ormaliedctrs.temperature isfh619a_07 temperature, t a (c) i ceo (na) 1000.00 100.00 10.00 1.00 0.10 C40C20020406080100 v ce =300 v v ce =200 v v ce =50 v isfh619a_08 forward current, i f (ma) current transfer ratio, ctr 10000 1000 100 0.10 1.00 10.00 100.00 v ce =1.2 v v ce =1 v isfh619a_09 temperature, t a (c) normalized ctr 1.2 1.0 0.8 0.6 0.4 0.2 0 C40 C20 0 20 40 60 80 100 i f =10ma i f = 1.0 ma
sfh619a document number 83674 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 5 package dimensions in inches (mm) isfh619a_10 load resistor, rl (k ? ) time switching, s 0.1 1 10 1000.00 100.00 10.00 1.00 t off t on figure 9. switching time vs. load resistor i178027 .255 (6.48) .268 (6.81) 1 2 4 3 .179 (4.55) .190 (4.83) pin one id .030 (.76) .045 (1.14) 4 typ. .100 (2.54) .130 (3.30) .150 (3.81) .020 (.508 ) .035 (.89) 10 3C9 .018 (.46) .022 (.56) .008 (.20) .012 (.30) .031 (.79) typ. .050 (1.27) typ. .300 (7.62) typ. .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) .050 (1.27) iso method a
www.vishay.com 6 document number 83674 rev. 1.4, 26-oct-04 sfh619a vishay semiconductors .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18494 min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9
sfh619a document number 83674 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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